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Text of the page (random words):
herence cache coherence memory hierarchy memory access pattern memory map secondary storage mos memory floating gate continuous availability areal density computer storage block data storage object storage direct attached storage network attached storage storage area network block level storage single instance storage data structured data unstructured data big data metadata data compression data corruption data cleansing data degradation data integrity data security data validation data validation and reconciliation data recovery storage data cluster directory shared resource file sharing file system clustered file system distributed file system distributed file system for cloud distributed data store distributed database database data bank data storage data store data deduplication data structure data redundancy replication computing memory refresh storage record information repository knowledge base computer file object file file deletion file copying backup core dump hex dump data communication information transfer temporary file copy protection digital rights management volume computing boot sector master boot record volume boot record guid partition table disk array disk image disk mirroring disk aggregation disk partitioning memory segmentation locality of reference logical disk storage virtualization virtual memory memory mapped file software entropy software rot in memory database in memory processing persistence computer science persistent data structure raid non raid drive architectures memory paging bank switching grid computing cloud computing cloud storage fog computing edge computing dew computing amdahl s law moore s law kryder s law volatile ram hardware cache cpu cache scratchpad memory dram edram sdram sgram ddr gddr lpddr qdrsram edo dram xdr dram rdram hbm sram 1t sram reram qram content addressable memory cam computational ram vram dual ported ram video ram dual ported dram historical williams kilburn tube 1946 1947 delay line memory 1947 mellon optical memory 1951 selectron tube 1952 dekatron t ram 2009 z ram 2002 2010 non volatile rom diode matrix mrom prom eprom eeprom rom cartridge solid state storage sss flash memory is used in solid state drive ssd solid state hybrid drive sshd usb flash drive ibm flashsystem flash core module memory card memory stick compactflash pc card multimediacard sd card sim card smartmedia universal flash storage sxs microp2 xqd card programmable metallization cell nvram memistor memristor pcm 3d xpoint mram electrochemical ram ecram nano ram cbram early stage nvram feram reram fefet memory analog recording phonograph cylinder phonograph record quadruplex videotape vision electronic recording apparatus magnetic recording magnetic storage magnetic tape magnetic tape data storage tape drive tape library digital data storage dds videotape cassette tape linear tape open betamax 8 mm video format dv minidv micromv u matic vhs s vhs vhs c d vhs hard disk drive optical 3d optical data storage optical disc laserdisc compact disc digital audio cdda cd cd video cd r cd rw video cd super video cd mini cd nintendo optical discs cd rom hyper cd rom dvd dvd r dvd video dvd card dvd ram minidvd hd dvd blu ray ultra hd blu ray holographic versatile disc worm in development cbram racetrack memory nram millipede memory ecram patterned media holographic data storage electronic quantum holography 5d optical data storage dna digital data storage universal memory time crystal quantum memory ultraram historical paper data storage 1725 punched card 1725 punched tape 1725 plugboard drum memory 1932 magnetic core memory 1949 plated wire memory 1957 core rope memory 1960s thin film memory 1962 disk pack 1962 twistor memory 1968 bubble memory 1970 floppy disk 1971 v t e non volatile memory nvm or non volatile storage is a type of computer memory that can retain stored information even after power is removed in contrast volatile memory needs constant power in order to retain data non volatile memory typically refers to storage in memory chips which store data in floating gate memory cells consisting of floating gate mosfets metal oxide semiconductor field effect transistors including flash memory storage such as nand flash and solid state drives ssd other examples of non volatile memory include read only memory rom eprom erasable programmable rom and eeprom electrically erasable programmable rom ferroelectric ram most types of computer data storage devices e g disk storage hard disk drives optical discs floppy disks and magnetic tape and early computer storage methods such as punched tape and cards 1 overview edit non volatile memory is typically used for the task of secondary storage or long term persistent storage the most widely used form of primary storage today as of is a volatile form of random access memory ram meaning that when the computer is shut down anything contained in ram is lost however most forms of non volatile memory have limitations that make them unsuitable for use as primary storage typically non volatile memory costs more provides lower performance or has a limited lifetime compared to volatile random access memory non volatile data storage can be categorized into electrically addressed systems for example flash memory and read only memory and mechanically addressed systems hard disks optical discs magnetic tape holographic memory and such 2 3 generally speaking electrically addressed systems are expensive and have limited capacity but are fast whereas mechanically addressed systems cost less per bit but are slower electrically addressed edit main article non volatile random access memory electrically addressed semiconductor non volatile memories can be categorized according to their write mechanism read only and read mostly devices edit mask roms are factory programmable only and typically used for large volume products that are not required to be updated after the memory device is manufactured programmable read only memory prom can be altered once after the memory device is manufactured using a prom programmer programming is often done before the device is installed in its target system typically an embedded system the programming is permanent and further changes require the replacement of the device data is stored by physically altering burning storage sites in the device an eprom is an erasable rom that can be changed more than once however writing new data to an eprom requires a special programmer circuit eproms have a quartz window that allows them to be erased with ultraviolet light but the whole device is cleared at one time a one time programmable otp device may be implemented using an eprom chip without the quartz window this is less costly to manufacture an electrically erasable programmable read only memory eeprom uses voltage to erase memory these erasable memory devices require a significant amount of time to erase data and write new data they are not usually configured to be programmed by the processor of the target system data is stored using floating gate transistors which require special operating voltages to trap or release electric charge on an insulated control gate to store information flash memory edit main article flash memory flash memory is a solid state chip that maintains stored data without any external power source it is a close relative to the eeprom it differs in that erase operations must be done on a block basis and its capacity is substantially larger than that of an eeprom flash memory devices use two different technologies nor and nand to map data nor flash provides high speed random access reading and writing data in specific memory locations it can retrieve as little as a single byte nand flash reads and writes sequentially at high speed handling data in blocks however it is slower at reading when compared to nor nand flash reads faster than it writes quickly transferring whole pages of data less expensive than nor flash at high densities nand technology offers higher capacity for the same sized silicon 4 ferroelectric ram f ram edit main article ferroelectric ram ferroelectric ram feram f ram or fram is a form of random access memory similar in construction to dram both use a capacitor and transistor but instead of using a simple dielectric layer the capacitor an f ram cell contains a thin ferroelectric film of lead zirconate titanate pb zr ti o 3 commonly referred to as pzt the zr ti atoms in the pzt change polarity in an electric field thereby producing a binary switch due to the pzt crystal maintaining polarity f ram retains its data memory when power is shut off or interrupted due to this crystal structure and how it is influenced f ram offers distinct properties from other nonvolatile memory options including extremely high although not infinite endurance exceeding 10 16 read write cycles for 3 3 v devices ultra low power consumption since f ram does not require a charge pump like other non volatile memories single cycle write speeds and gamma radiation tolerance 5 magnetoresistive ram mram edit main article magnetoresistive random access memory magnetoresistive ram stores data in magnetic storage elements called magnetic tunnel junctions mtjs the first generation of mram such as everspin technologies 4 mbit utilized field induced writing the second generation is developed mainly through two approaches thermal assisted switching tas 6 which is being developed by crocus technology and spin transfer torque stt which crocus hynix ibm and several other companies are developing 7 phase change memory pcm edit main article phase change memory phase change memory stores data in chalcogenide glass which can reversibly change the phase between the amorphous and the crystalline state accomplished by heating and cooling the glass the crystalline state has low resistance and the amorphous phase has high resistance which allows currents to be switched on and off to represent digital 1 and 0 states 8 9 fefet memory edit fefet memory uses a transistor with ferroelectric material to permanently retain state rram memory edit main article resistive random access memory rram reram works by changing the resistance across a dielectric solid state material often referred to as a memristor reram involves generating defects in a thin oxide layer known as oxygen vacancies oxide bond locations where the oxygen has been removed which can subsequently charge and drift under an electric field the motion of oxygen ions and vacancies in the oxide would be analogous to the motion of electrons and holes in a semiconductor although reram was initially seen as a replacement technology for flash memory the cost and performance benefits of reram have not been enough for companies to proceed with the replacement apparently a broad range of materials can be used for reram however the discovery 10 that the popular high κ gate dielectric hfo 2 can be used as a low voltage reram has encouraged researchers to investigate more possibilities mechanically addressed systems edit see also ibm millipede and holographic memory mechanically addressed systems use a recording head to read and write on a designated storage medium since the access time depends on the physical location of the data on the device mechanically addressed systems may be sequential access for example magnetic tape stores data as a sequence of bits on a long tape transporting the tape past the recording head is required to access any part of the storage tape media can be removed from the drive and stored giving indefinite capacity at the cost of the time required to retrieve a dismounted tape 11 12 hard disk drives use a rotating magnetic disk to store data access time is longer than for semiconductor memory but the cost per stored data bit is very low and they provide random access to any location on the disk formerly removable disk packs were common allowing storage capacity to be expanded optical discs store data by altering a pigment layer on a plastic disk and are similarly random access read only and read write versions are available removable media again allows indefinite expansion and some automated systems e g optical jukebox were used to retrieve and mount disks under direct program control 13 14 15 domain wall memory dwm stores data in a magnetic tunnel junctions mtjs which works by controlling domain wall dw motion in ferromagnetic nanowires 16 organic edit further information organic electronics thinfilm produces rewriteable non volatile organic ferroelectric memory based on ferroelectric polymers thinfilm successfully demonstrated roll to roll printed memories in 2009 17 18 19 in thinfilm s organic memory the ferroelectric polymer is sandwiched between two sets of electrodes in a passive matrix each crossing of metal lines is a ferroelectric capacitor and defines a memory cell non volatile main memory edit non volatile main memory nvmm is primary storage with non volatile attributes 20 this application of non volatile memory presents security challenges 21 nvdimm is one example of the non volatile main memory references edit patterson david hennessy john 2005 computer organization and design the hardware software interface elsevier p 23 isbn 9780080502571 i nvmm securing non volatile memory on the fly techrepublic august 2011 archived from the original on 22 march 2017 retrieved 21 march 2017 non volatile memory nvm techopedia archived from the original on 22 march 2017 retrieved 21 march 2017 russell kay 7 june 2010 flash memory computerworld archived from the original on 10 june 2010 f ram memory technology ramtron com archived from the original on 27 january 2012 retrieved 30 january 2012 the emergence of practical mram crocus technology magnetic sensors tmr sensors pdf archived from the original pdf on 27 april 2011 retrieved 20 july 2009 latest news ee times archived from the original on 19 january 2012 hudgens s johnson b november 2004 overview of phase change chalcogenide nonvolatile memory technology mrs bulletin 29 11 829 832 doi 10 1557 mrs2004 236 issn 1938 1425 s2cid 137902404 pirovano a lacaita a l benvenuti a pellizzer f hudgens s bez r december 2003 scaling analysis of phase change memory technology ieee international electron devices meeting 2003 pp 29 6 1 29 6 4 doi 10 1109 iedm 2003 1269376 isbn 0 7803 7872 5 s2cid 1130884 lee h y chen p s wu t y chen y s wang c c tzeng p j lin c h chen f lien c h tsai m j 2008 low power and high speed bipolar switching with a thin reactive ti buffer layer in robust hf o2 based rram 2008 ie definition tape drive techtarget archived from the original on 7 july 2015 retrieved 7 july 2015 tape drives snia org archived from the original on 7 july 2015 retrieved 7 july 2015 what is hard drive computerhope com archived from the original on 8 july 2015 retrieved 7 july 2015 ibm 2314 disk drives ncl ac uk archived from the original on 2 october 2015 retrieved 7 july 2015 optical blu ray jukeboxes and libraries systems for archiving storage kint...
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