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t wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 device description 2 reverse bias 3 safe operating area 4 applications 5 references 6 external links toggle the table of contents gate turn off thyristor 18 languages العربية català čeština deutsch español eesti فارسی suomi français हिन्दी italiano 日本語 한국어 nederlands português українська tiếng việt 中文 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikimedia commons wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia semiconductor device for other uses of the word see gto disambiguation this article needs more citations please help improve this article by adding citations to reliable sources unsourced material may be challenged and removed find sources gate turn off thyristor news newspapers books scholar jstor september 2026 learn how and when to remove this message gate turn off thyristor gto simplified cross section of a gto thyristor component type active inventor general electric pin names anode gate cathode electronic symbol a gate turn off thyristor gto is a type of high power e g 1200 v ac thyristor that unlike a normal thyristor is fully controllable and can be turned on and off by their gate lead it was invented by general electric 1 device description edit equivalent circuit of a gto thyristor normal thyristors silicon controlled rectifiers are not fully controllable switches a fully controllable switch can be turned on and off at will thyristors can only be turned on using the gate lead but cannot be turned off using the gate lead thyristors are switched on by a gate signal but even after the gate signal is de asserted removed reverse biased the thyristor remains in the on state until a turn off condition occurs which can be the application of a reverse voltage to the terminals or a decrease of the forward current below a certain threshold value known as the holding current thus a thyristor behaves like a normal semiconductor diode after it is turned on or fired the gto can be turned on by a gate signal and can also be turned off by a gate signal of negative polarity turn on is accomplished by a positive current pulse between the gate and cathode terminals as the gate cathode behaves like pn junction there will be some relatively small voltage between the terminals the turn on phenomenon in gto is however not as reliable as an scr thyristor and a small positive gate current must be maintained even after turn on to improve reliability turn off is accomplished by a negative voltage pulse between the gate and cathode terminals some of the forward current about one third to one fifth is stolen and used to induce a cathode gate voltage which in turn causes the forward current to fall and the gto will switch off transitioning to the blocking state gto thyristors suffer from long switch off times whereby after the forward current falls there is a long tail time where residual current continues to flow until all remaining charge from the device is taken away this restricts the maximum switching frequency to about 1 khz however the turn off time of a gto is still approximately ten times faster than that of a comparable scr 2 to assist with the turn off process gto thyristors are usually constructed from a large number hundreds or thousands of small thyristor cells connected in parallel comparison of an scr and gto of same rating characteristic description thyristor 1600 v 350 a gto 1600 v 350 a v t on on state voltage drop 1 5 v 3 4 v t on i g on turn on time gate current 8 μs 200 ma 2 μs 2 a t off turn off time 150 μs 15 μs a distributed buffer gate turn off thyristor db gto is a thyristor with additional pn layers in the drift region to reshape the field profile and increase the voltage blocked in the off state compared to a typical pnpn structure of a conventional thyristor the db gto thyristor has a pn pn pn structure reverse bias edit this section duplicates the scope of other articles specifically integrated_gate commutated_thyristor reverse_bias please discuss this issue and help introduce a summary style to the section by replacing the section with a link and a summary or by splitting the content into a new article may 2025 gto thyristors are available with or without reverse blocking capability reverse blocking capability adds to the forward voltage drop because of the need to have a long low doped p1 region gto thyristors capable of blocking reverse voltage are known as symmetrical gto thyristors abbreviated s gto usually the reverse blocking voltage rating and forward blocking voltage rating are the same the typical application for symmetrical gto thyristors is in the current source inverter gto thyristors incapable of blocking reverse voltage are known as asymmetrical gto thyristors abbreviated a gto and are generally more common than symmetrical gto thyristors they typically have a reverse breakdown rating in the tens of volts q a gto thyristors are used where either a reverse conducting diode is applied in parallel for example in voltage source inverters or where reverse voltage would never occur for example in switching power supplies or dc traction choppers gto thyristors can be fabricated with a reverse conducting diode in the same package these are known as reverse conducting gtos or rcgto safe operating area edit see also safe operating area this section does not cite any sources please help improve this section by adding citations to reliable sources unsourced material may be challenged and removed find sources gate turn off thyristor news newspapers books scholar jstor september 2026 learn how and when to remove this message unlike the insulated gate bipolar transistor igbt the gto thyristor requires external snubber circuits to shape the turn on and turn off currents to prevent device destruction during turn on the device has a maximum di dt rating limiting the rise of current this is to allow the entire bulk of the device to reach turn on before full current is reached if this rating is exceeded the area of the device nearest the gate contacts will overheat and can melt from overcurrent the rate of di dt is usually controlled by adding a saturable reactor turn on snubber although turn on di dt is a less serious constraint with gto thyristors than it is with normal thyristors because of the way the gto is constructed from many small thyristor cells in parallel reset of the saturable reactor usually places a minimum off time requirement on gto based circuits during turn off current concentrates into thin regions filaments in regions farthest from the gate region creating hot spots the forward voltage of the device therefore must be limited until the current tails off usually around 20 of the forward blocking voltage rating if the voltage rises too fast at turn off not all of the device will turn off and the resultaing current crowding can cause the gto can fail possibly explosively substantial snubber circuits are added around gto thyristors to limit the rise of voltage at turn off and resetting the snubber circuit usually places a minimum on time requirement on gto based circuits the minimum on and off time is handled in dc motor chopper circuits by using a variable switching frequency at the lowest and highest duty cycle this is observable in traction applications where the frequency will ramp up as the motor starts then the frequency stays constant over most of the speed ranges then the frequency drops back down to zero at full speed applications edit this section does not cite any sources please help improve this section by adding citations to reliable sources unsourced material may be challenged and removed find sources gate turn off thyristor news newspapers books scholar jstor september 2026 learn how and when to remove this message the main applications are in variable speed motor drives high power inverters and traction gtos are increasingly being replaced by integrated gate commutated thyristors igct which are an evolutionary development of the gto and insulated gate bipolar transistors igbt which are members of the transistor family they are also used in the starter circuits for fluorescent lamps citation needed references edit hingorani narain g laszlo gyugi 2011 understanding facts india ieee press p 41 isbn 978 81 265 3040 3 gate turn off switch 17 september 2009 shah p b electronics letters vol 36 p 2108 2000 shah p b geil b r ervin m e et al ieee trans power elect vol 17 p 1073 2002 external links edit gate turn off thyristor gto electrical classroom v t e electronic components semiconductor devices mos transistors transistor nmos pmos bicmos biofet chemical field effect transistor chemfet complementary mos cmos depletion load nmos fin field effect transistor finfet floating gate mosfet fgmos insulated gate bipolar transistor igbt isfet ldmos mos field effect transistor mosfet multi gate field effect transistor mugfet power mosfet thin film transistor tft vmos umos qfet tunnel field effect transistor tfet high electron mobility transistor hemt rf cmos native transistor other transistors bipolar junction transistor bjt darlington transistor diffused junction transistor field effect transistor fet junction gate fet jfet organic fet ofet light emitting transistor let pentode transistor point contact transistor programmable unijunction transistor put static induction transistor sit tetrode transistor nanoscale vacuum channel transistor nvct single electron transistor set heterojunction bipolar transistor hbt mesfet heterostructure emitter bipolar transistor hebt itfet avalanche transistor junctionless nanowire transistor jlnt schottky transistor spin transistor ballistic collection transistor ballistic deflection transistor bdt drift field transistor organic electrochemical transistor oect spacistor surface barrier transistor synaptic transistor oxide thin film transistor nomfet grown junction transistor eosfet alloy junction transistor fe fet dna field effect transistor dnafet diodes avalanche diode shockley diode selenium rectifier fast diode single photon avalanche diode spad constant current diode cld crd gunn diode varicap impatt diode metal insulator metal diode mim diode transient voltage suppression diode tvs diode laser diode ld light emitting diode led organic light emitting diode oled photodiode pin diode p n diode tunnel diode avalanche photodiode apd solar cell multi junction solar cell mj hybrid solar cell schottky junction solar cell plasmonic solar cell heterojunction solar cell hjt schottky diode step recovery diode srd zener diode resonant tunneling diode rtd photoreflector backward diode geometric diode lr diode chua s diode baritt diode stabistor phosphorescent organic light emitting diode pholed thin film diode superluminescent diode sld josephson diode hole accumulation diode had silicon photomultiplier sipm metal rectifier bifacial solar cells bsc integrated circuits hybrid integrated circuit hic mixed signal integrated circuit mos integrated circuit mos ic three dimensional integrated circuit 3d ic photonic integrated circuit pic application specific integrated circuit asic field programmable gate array fpga system on a chip soc other devices diac heterostructure barrier varactor light emitting capacitor lec memistor memristor memtransistor memory cell metal oxide varistor mov organic semiconductor photodetector silicon controlled rectifier scr silicon controlled switch scs solaristor static induction thyristor sith thyristor trancitor triac varicap vertical cavity surface emitting laser vcsel gate turn off thyristor gto integrated gate commutated thyristor igct unijunction transistor ujt quantum cascade laser qcl photoresistor quantum dot display quantum dot solar cell photoelectrochemical cell dye sensitized solar cell plasmonic solar cell quantum dot laser quadrac interband cascade laser icl oscillistor mos composite static induction thyristor csmt mos controlled thyristor mct resistive opto isolator ro emitter turn off thyristor eto trisil quantum well infrared photodetector qwip quantum cascade detector qcd resonant cavity enhanced photo detector rce golay cell hybrid pixel detector semiconductor detector voltage regulators linear regulator low dropout regulator switching regulator buck boost buck boost split pi ćuk sepic charge pump switched capacitor vacuum tubes standard acorn tube audion beam tetrode barretter compactron diode fleming valve neutron tube nonode nuvistor pentagrid hexode heptode octode pentode photomultiplier pmt phototube tetrode triode x ray tube double diode triode additron tube computron tube micropup rf backward wave oscillator bwo cavity magnetron crossed field amplifier cfa gyrotron inductive output tube iot klystron maser sutton tube traveling wave tube twt vircator cathode ray tubes beam deflection tube charactron iconoscope magic eye tube monoscope selectron tube storage tube trochotron video camera tube williams tube gas filled tubes crossatron dekatron ignitron krytron mercury arc valve nixie tube thyratron trigatron voltage regulator tube geiger müller tube wire chamber neon lamp adjustable potentiometer digital variable capacitor varicap passive connector audio and video electrical power rf ferrite antifuse fuse resettable efuse resistor switch thermistor varistor reactive capacitor types ceramic resonator crystal oscillator inductor relay reed relay mercury relay other devices hall effect sensor squid spin valve magnetic tunnel junction mtj planar hall sensor ggnmos retrieved from https en wikipedia org w index php title gate_turn off_thyristor oldid 1375415711 categories solid state switches general electric inventions hidden categories articles with short description short description matches wikidata articles needing additional references from september 2026 all articles needing additional references duplicate articles all articles with unsourced statements articles with unsourced statements from september 2026 this page was last edited on 17 september 2026 at 17 05 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply by using this site you agree to the terms of use and privacy policy wikipedia is a registered trademark of the wikimedia foundation inc a non profit organization privacy policy about wikipedia disclaimers contact wikipedia legal safety contacts code of conduct developers statistics cookie statement mobile view search 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