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tunnel field effect transistor wikipedia jump to content main menu main menu move to sidebar hide navigation main page contents current events random article about wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 structure 2 device operation 3 prototype devices 4 theory and simulations 5 see also 6 references toggle the table of contents tunnel field effect transistor 4 languages català فارسی français 日本語 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia experimental transistor the tunnel field effect transistor tfet is an experimental type of transistor even though its structure is very similar to a metal oxide semiconductor field effect transistor mosfet the fundamental switching mechanism differs making this device a promising candidate for low power electronics tfets switch by modulating quantum tunneling through a barrier instead of modulating thermionic emission over a barrier as in traditional mosfets because of this tfets are not limited by the thermal maxwell boltzmann tail of carriers which limits mosfet drain current subthreshold swing to about 60 mv decade of current at room temperature tfet studies can be traced back to stuetzer who in 1952 published first investigations of a transistor containing the basic elements of the tfet a gated p n junction the reported surface conductivity control was however not related to tunneling 1 the first tunneling tfet was reported by steven hofstein and george warfield at rca in 1965 2 joerg appenzeller and his colleagues at ibm were the first to demonstrate that current swings below the mosfet s 60 mv per decade limit were possible in 2004 they reported they had created a tunnel transistor with a carbon nanotube channel and a subthreshold swing of just 40 mv per decade 3 theoretical work has indicated that significant power savings can be obtained by using low voltage tfets in place of mosfets in logic circuits 4 drain current vs gate voltage for hypothetical tfet and mosfet devices the tfet may be able to achieve higher drain current for small voltages in classical mosfet devices the 60 mv decade is a fundamental limit to power scaling the ratio between on current and the off current especially the subthreshold leakage one major contributor of power consumption is given by the ratio between the threshold voltage and the subthreshold slope e g n 60 m v d e c a d e v t h 300 m v i o n i o f f v t h n 5 d e c a d e s 100 000 displaystyle n 60 mathrm mv decade v_ rm th 300 mathrm mv rightarrow i_ rm on i_ rm off v_ rm th n 5 mathrm decades 100 000 the transistor speed is proportional to the on current the higher the on current the faster a transistor will be able to charge its fan out consecutive capacitive load for a given transistor speed and a maximum acceptable subthreshold leakage the subthreshold slope thus defines a certain minimal threshold voltage reducing the threshold voltage is an essential part for the idea of constant field scaling since 2003 the major technology developers got almost stuck in threshold voltage scaling and thus could also not scale supply voltage which due to technical reasons has to be at least 3 times the threshold voltage for high performance devices as a consequence the processor speed did not develop as fast as before 2003 see beyond cmos the advent of a mass producible tfet device with a slope far below 60 mv decade will enable the industry to continue the scaling trends from the 1990s where processor frequency doubled each 3 years structure edit the basic tfet structure is similar to a mosfet except that the source and drain terminals of a tfet are doped of opposite types see figure a common tfet device structure consists of a p i n p type intrinsic n type junction in which the electrostatic potential of the intrinsic region is controlled by a gate terminal basic lateral tfet structure device operation edit the device is operated by applying gate bias so that electron accumulation occurs in the intrinsic region for an n type tfet at sufficient gate bias band to band tunneling btbt occurs when the conduction band of the intrinsic region aligns with the valence band of the p region electrons from the valence band of the p type region tunnel into the conduction band of the intrinsic region and current can flow across the device 5 as the gate bias is reduced the bands become misaligned and current can no longer flow energy band diagram for a basic lateral tfet structure the device turns on when sufficient gate voltage is applied such that electrons can tunnel from the source valence band to the channel conduction band prototype devices edit a group at ibm were the first to demonstrate that current swings below the mosfet s 60 mv per decade limit were possible in 2004 they reported a tunnel transistor with a carbon nanotube channel and a subthreshold swing of just 40 mv per decade 6 by 2010 many tfets have been fabricated in different material systems 4 but none has yet been able to demonstrate steep subthreshold slope at drive currents required for mainstream applications in iedm 2016 a group from lund university demonstrated a vertical nanowire inas gaassb gasb tfet 7 which exhibits a subthreshold swing of 48 mv decade a on current of 10 6 μa μm for off current of 1 na μm at a supply voltage of 0 3 v showing the potential of outperforming si mosfets at a supply voltage lower than 0 3 v theory and simulations edit double gate thin body quantum well to quantum well tfet structures have been proposed to overcome some challenges associated with the lateral tfet structure such as its requirement for ultra sharp doping profiles however such devices may be plagued by gate leakage due to large vertical fields in the device structure 8 simulations in 2013 showed that tfets using inas gasb may have a subthreshold swing of 33 mv decade under ideal conditions 9 the use of van der waals heterostructures for tfets were proposed in 2016 10 see also edit tunnel junction tunnel diode carver mead references edit stuetzer o m 1952 junction fieldistors proceedings of the ire 40 11 1377 81 doi 10 1109 jrproc 1952 273965 s2cid 51659160 hofstein s r warfield g 1965 the insulated gate tunnel junction triode ieee transactions on electron devices 12 2 66 76 bibcode 1965ited 12 66h doi 10 1109 t ed 1965 15455 appenzeller j 2004 01 01 band to band tunneling in carbon nanotube field effect transistors physical review letters 93 19 196805 bibcode 2004phrvl 93s6805a doi 10 1103 physrevlett 93 196805 pmid 15600865 s2cid 17240712 1 2 seabaugh a c zhang q 2010 low voltage tunnel transistors for beyond cmos logic proceedings of the ieee 98 12 2095 2110 doi 10 1109 jproc 2010 2070470 s2cid 7847386 zhang lining chan mansun eds 2016 tunneling field effect transistor technology cham springer international publishing doi 10 1007 978 3 319 31653 6 isbn 978 3 319 31651 2 seabaugh september 2013 the tunneling transistor ieee spectrum ieee memisevic e svensson j hellenbrand m lind e wernersson l e 2016 vertical inas gaassb gasb tunneling field effect transistor on si with s 48 mv decade and i on 10 μa μm for i off 1 na μm at v ds 0 3 v 2016 ieee international electron devices meeting iedm pp 19 1 1 4 doi 10 1109 iedm 2016 7838450 isbn 978 1 5090 3902 9 s2cid 34315968 teherani j t agarwal s yablonovitch e hoyt j l antoniadis d a 2013 impact of quantization energy and gate leakage in bilayer tunneling transistors ieee electron device letters 34 2 298 bibcode 2013iedl 34 298t doi 10 1109 led 2012 2229458 s2cid 6216978 huang david fang hui javey ali 2013 device simulation of tunnel field effect transistor tfet pdf university of california cao jiang logoteta demetrio ozkaya sibel biel blanca cresti alessandro pala marco g esseni david 2016 operation and design of van der waals tunnel transistors a 3 d quantum transport study ieee transactions on electron devices 63 11 4388 94 bibcode 2016ited 63 4388c doi 10 1109 ted 2016 2605144 s2cid 7929512 v t e electronic components semiconductor devices mos transistors transistor nmos pmos bicmos biofet chemical field effect transistor chemfet complementary mos cmos depletion load nmos fin field effect transistor finfet floating gate mosfet fgmos insulated gate bipolar transistor igbt isfet ldmos mos field effect transistor mosfet multi gate field effect transistor mugfet power mosfet thin film transistor tft vmos umos qfet tunnel field effect transistor tfet high electron mobility transistor hemt rf cmos native transistor other transistors bipolar junction transistor bjt darlington transistor diffused junction transistor field effect transistor fet junction gate fet jfet organic fet ofet light emitting transistor let pentode transistor point contact transistor programmable unijunction transistor put static induction transistor sit tetrode transistor nanoscale vacuum channel transistor nvct single electron transistor set heterojunction bipolar transistor hbt mesfet heterostructure emitter bipolar transistor hebt itfet avalanche transistor junctionless nanowire transistor jlnt schottky transistor spin transistor ballistic collection transistor ballistic deflection transistor bdt drift field transistor organic electrochemical transistor oect spacistor surface barrier transistor synaptic transistor oxide thin film transistor nomfet grown junction transistor eosfet alloy junction transistor fe fet dna field effect transistor dnafet diodes avalanche diode shockley diode selenium rectifier fast diode single photon avalanche diode spad constant current diode cld crd gunn diode varicap impatt diode metal insulator metal diode mim diode transient voltage suppression diode tvs diode laser diode ld light emitting diode led organic light emitting diode oled photodiode pin diode p n diode tunnel diode avalanche photodiode apd solar cell multi junction solar cell mj hybrid solar cell schottky junction solar cell plasmonic solar cell heterojunction solar cell hjt schottky diode step recovery diode srd zener diode resonant tunneling diode rtd photoreflector backward diode geometric diode lr diode chua s diode baritt diode stabistor phosphorescent organic light emitting diode pholed thin film diode superluminescent diode sld josephson diode hole accumulation diode had silicon photomultiplier sipm metal rectifier bifacial solar cells bsc integrated circuits hybrid integrated circuit hic mixed signal integrated circuit mos integrated circuit mos ic three dimensional integrated circuit 3d ic photonic integrated circuit pic application specific integrated circuit asic field programmable gate array fpga system on a chip soc other devices diac heterostructure barrier varactor light emitting capacitor lec memistor memristor memtransistor memory cell metal oxide varistor mov organic semiconductor photodetector silicon controlled rectifier scr silicon controlled switch scs solaristor static induction thyristor sith thyristor trancitor triac varicap vertical cavity surface emitting laser vcsel gate turn off thyristor gto integrated gate commutated thyristor igct unijunction transistor ujt quantum cascade laser qcl photoresistor quantum dot display quantum dot solar cell photoelectrochemical cell dye sensitized solar cell plasmonic solar cell quantum dot laser quadrac interband cascade laser icl oscillistor mos composite static induction thyristor csmt mos controlled thyristor mct resistive opto isolator ro emitter turn off thyristor eto trisil quantum well infrared photodetector qwip quantum cascade detector qcd resonant cavity enhanced photo detector rce golay cell hybrid pixel detector semiconductor detector voltage regulators linear regulator low dropout regulator switching regulator buck boost buck boost split pi ćuk sepic charge pump switched capacitor vacuum tubes standard acorn tube audion beam tetrode barretter compactron diode fleming valve neutron tube nonode nuvistor pentagrid hexode heptode octode pentode photomultiplier pmt phototube tetrode triode x ray tube double diode triode additron tube computron tube micropup rf backward wave oscillator bwo cavity magnetron crossed field amplifier cfa gyrotron inductive output tube iot klystron maser sutton tube traveling wave tube twt vircator cathode ray tubes beam deflection tube charactron iconoscope magic eye tube monoscope selectron tube storage tube trochotron video camera tube williams tube gas filled tubes crossatron dekatron ignitron krytron mercury arc valve nixie tube thyratron trigatron voltage regulator tube geiger müller tube wire chamber neon lamp adjustable potentiometer digital variable capacitor varicap passive connector audio and video electrical power rf ferrite antifuse fuse resettable efuse resistor switch thermistor varistor reactive capacitor types ceramic resonator crystal oscillator inductor relay reed relay mercury relay other devices hall effect sensor squid spin valve magnetic tunnel junction mtj planar hall sensor ggnmos authority control databases national united states israel other yale lux retrieved from https en wikipedia org w index php title tunnel_field effect_transistor oldid 1350924860 categories transistor types field effect transistors hidden categories articles with short description short description is different from wikidata this page was last edited on 24 april 2026 at 21 21 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply 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