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Text of the page (random words):
6 kbit 10 ns bimos texas instruments 800 nm bicmos 53 1990 4 mbit 15 23 ns mosfet nec toshiba hitachi mitsubishi cmos 50 1992 16 mbit 12 15 ns mosfet fujitsu nec 400 nm december 1994 512 kbit 2 5 ns mosfet ibm cmos soi 54 1995 4 mbit 6 ns cache syncburst hitachi 100 nm cmos 55 256 mbit mosfet hyundai cmos 56 dram dynamic random access memory dram date of introduction chip name capacity bits dram type manufacturer s process mosfet area ref 1965 1 bit dram cell toshiba 16 17 1967 1 bit dram cell ibm mos 19 42 1968 256 bit dram ic fairchild pmos 8 1969 1 bit dram cell intel pmos 42 1970 1102 1 kbit dram ic intel honeywell pmos 42 1103 1 kbit dram intel 8 000 nm pmos 10 mm² 57 58 20 1971 μpd403 1 kbit dram nec nmos 59 2 kbit dram general instrument pmos 13 mm² 60 1972 2107 4 kbit dram intel nmos 43 61 1973 8 kbit dram ibm pmos 19 mm² 60 1975 2116 16 kbit dram intel nmos 62 8 1977 64 kbit dram ntt nmos 35 mm² 60 1979 mk4816 16 kbit psram mostek nmos 63 64 kbit dram siemens vmos 25 mm² 60 1980 256 kbit dram nec ntt 1 000 1 500 nm nmos 34 42 mm² 60 1981 288 kbit dram ibm mos 25 mm² 64 1983 64 kbit dram intel 1 500 nm cmos 20 mm² 60 256 kbit dram ntt cmos 31 mm² january 5 1984 8 mbit dram hitachi mos 65 66 february 1984 1 mbit dram hitachi nec 1 000 nm nmos 74 76 mm² 60 67 ntt 800 nm cmos 53 mm² 60 67 1984 tms4161 64 kbit dpram vram texas instruments nmos 68 69 january 1985 μpd41264 256 kbit dpram vram nec nmos 70 71 june 1986 1 mbit psram toshiba cmos 72 1986 4 mbit dram nec 800 nm nmos 99 mm² 60 texas instruments toshiba 1 000 nm cmos 100 137 mm² 1987 16 mbit dram ntt 700 nm cmos 148 mm² 60 october 1988 512 kbit hsdram ibm 1 000 nm cmos 78 mm² 73 1991 64 mbit dram matsushita mitsubishi fujitsu toshiba 400 nm cmos 50 1993 256 mbit dram hitachi nec 250 nm cmos 1995 4 mbit dpram vram hitachi cmos 55 january 9 1995 1 gbit dram nec 250 nm cmos 74 55 hitachi 160 nm cmos 1996 4 mbit fram samsung nmos 75 1997 4 gbit qlc nec 150 nm cmos 50 1998 4 gbit dram hyundai cmos 56 june 2001 tc51w3216xb 32 mbit psram toshiba cmos 76 february 2001 4 gbit dram samsung 100 nm cmos 50 77 sdram part of this section is transcluded from synchronous dynamic random access memory edit history synchronous dynamic random access memory sdram date of introduction chip name capacity bits 78 sdram type manufacturer s process mosfet area ref 1992 km48sl2000 16 mbit sdr samsung cmos 79 22 1996 msm5718c50 18 mbit rdram oki cmos 325 mm 2 80 n64 rdram 36 mbit rdram nec cmos 81 1024 mbit sdr mitsubishi 150 nm cmos 50 1997 1024 mbit sdr hyundai soi 56 1998 md5764802 64 mbit rdram oki cmos 325 mm 2 80 march 1998 direct rdram 72 mbit rdram rambus cmos 82 june 1998 64 mbit ddr samsung cmos 83 84 85 1998 64 mbit ddr hyundai cmos 56 128 mbit sdr samsung cmos 86 84 1999 128 mbit ddr samsung cmos 84 1024 mbit ddr samsung 140 nm cmos 50 2000 gs edram 32 mbit edram sony toshiba 180 nm cmos 279 mm 2 87 2001 288 mbit rdram hynix cmos 88 ddr2 samsung 100 nm cmos 85 50 2002 256 mbit sdr hynix cmos 88 2003 ee gs edram 32 mbit edram sony toshiba 90 nm cmos 86 mm 2 87 72 mbit ddr3 samsung 90 nm cmos 89 512 mbit ddr2 hynix cmos 88 elpida 110 nm cmos 90 1024 mbit ddr2 hynix cmos 88 2004 2048 mbit ddr2 samsung 80 nm cmos 91 2005 ee gs edram 32 mbit edram sony toshiba 65 nm cmos 86 mm 2 92 xenos edram 80 mbit edram nec 90 nm cmos 93 512 mbit ddr3 samsung 80 nm cmos 85 94 2006 1024 mbit ddr2 hynix 60 nm cmos 88 2008 lpddr2 hynix april 2008 8192 mbit ddr3 samsung 50 nm cmos 95 2008 16384 mbit ddr3 samsung 50 nm cmos 2009 ddr3 hynix 44 nm cmos 88 2048 mbit ddr3 hynix 40 nm 2011 16384 mbit ddr3 hynix 40 nm cmos 96 2048 mbit ddr4 hynix 30 nm cmos 96 2013 lpddr4 samsung 20 nm cmos 96 2014 8192 mbit lpddr4 samsung 20 nm cmos 97 2015 12 gbit lpddr4 samsung 20 nm cmos 86 2018 8192 mbit lpddr5 samsung 10 nm finfet 98 128 gbit ddr4 samsung 10 nm finfet 99 sgram and hbm synchronous graphics random access memory sgram and high bandwidth memory hbm date of introduction chip name capacity bits 78 sdram type manufacturer s process mosfet area ref november 1994 hm5283206 8 mbit sgram sdr hitachi 350 nm cmos 58 mm 2 100 101 december 1994 μpd481850 8 mbit sgram sdr nec cmos 280 mm 2 102 103 1997 μpd4811650 16 mbit sgram sdr nec 350 nm cmos 280 mm 2 104 105 september 1998 16 mbit sgram gddr samsung cmos 83 1999 km4132g112 32 mbit sgram sdr samsung cmos 106 2002 128 mbit sgram gddr2 samsung cmos 107 2003 256 mbit sgram gddr2 samsung cmos 107 sgram gddr3 march 2005 k4d553238f 256 mbit sgram gddr samsung cmos 77 mm 2 108 october 2005 256 mbit sgram gddr4 samsung cmos 109 2005 512 mbit sgram gddr4 hynix cmos 88 2007 1024 mbit sgram gddr5 hynix 60 nm 2009 2048 mbit sgram gddr5 hynix 40 nm 2010 k4w1g1646g 1024 mbit sgram gddr3 samsung cmos 100 mm 2 110 2012 4096 mbit sgram gddr3 sk hynix cmos 96 2013 hbm march 2016 mt58k256m32ja 8 gbit sgram gddr5x micron 20 nm cmos 140 mm 2 111 june 2016 32 gbit hbm2 samsung 20 nm cmos 112 113 2017 64 gbit hbm2 samsung 20 nm cmos 112 january 2018 k4zaf325bm 16 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1988 a 20 ns 128 k...
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