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65 nm process wikipedia jump to content main menu main menu move to sidebar hide navigation main page contents current events random article about wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 process node 2 example fujitsu 65 nm process 3 processors using 65 nm manufacturing technology 4 references 5 sources toggle the table of contents 65 nm process 13 languages català dansk español فارسی français italiano 한국어 português türkçe 吴语 閩南語 bân lâm gí 粵語 中文 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia redirected from 65 nm advanced lithographic node used in volume cmos semiconductor fabrication semiconductor device fabrication mosfet scaling process nodes 0 20 μm 1968 0 10 μm 1971 00 6 μm 1974 00 3 μm 1977 1 5 μm 1981 00 1 μm 1984 800 nm 1987 600 nm 1990 350 nm 1993 250 nm 1996 180 nm 1999 130 nm 2001 0 90 nm 2003 0 65 nm 2005 0 45 nm 2007 0 32 nm 2009 0 22 nm 2012 0 14 nm 2014 0 10 nm 2016 00 7 nm 2018 00 5 nm 2020 00 3 nm 2022 00 2 nm 2025 future 00 1 nm 2027 half nodes density cmos device multi gate moore s law transistor count semiconductor industry nanoelectronics v t e the 65 nm process is an advanced lithographic node used in volume cmos mosfet semiconductor fabrication printed linewidths i e transistor gate lengths can reach as low as 25 nm on a nominally 65 nm process while the pitch between two lines may be greater than 130 nm 1 process node edit for comparison cellular ribosomes are about 20 nm end to end a crystal of bulk silicon has a lattice constant of 0 543 nm so such transistors are on the order of 100 atoms across by september 2007 intel amd ibm umc and chartered were also producing 65 nm chips while feature sizes may be drawn as 65 nm or less the wavelengths of light used for lithography are 193 nm and 248 nm fabrication of sub wavelength features requires special imaging technologies such as optical proximity correction and phase shifting masks the cost of these techniques adds substantially to the cost of manufacturing sub wavelength semiconductor products with the cost increasing exponentially with each advancing technology node furthermore these costs are multiplied by an increasing number of mask layers that must be printed at the minimum pitch and the reduction in yield from printing so many layers at the cutting edge of the technology for new integrated circuit designs this factors into the costs of prototyping and production gate thickness another important dimension is reduced to as little as 1 2 nm intel only a few atoms insulate the switch part of the transistor causing charge to flow through it this undesired leakage is caused by quantum tunneling the new chemistry of high κ gate dielectrics must be combined with existing techniques including substrate bias and multiple threshold voltages to prevent leakage from prohibitively consuming power iedm papers from intel in 2002 2004 and 2005 illustrate the industry trend that the transistor sizes can no longer scale along with the rest of the feature dimensions gate width only changed from 220 nm to 210 nm going from 90 nm to 65 nm technologies however the interconnects metal and poly pitch continue to shrink thus reducing chip area and chip cost as well as shortening the distance between transistors leading to higher performance devices of greater complexity when compared with earlier nodes intel s 65nm process has a transistor density of 2 08 million transistors per square millimeter mtr mm2 2 example fujitsu 65 nm process edit gate length 30 nm high performance to 50 nm low power core voltage 1 0 v 11 cu interconnect layers using nano clustering silica as ultralow κ dielectric κ 2 25 metal 1 pitch 180 nm nickel silicide source drain gate oxide thickness 1 9 nm n 2 1 nm p there are actually two versions of the process cs200 focusing on high performance and cs200a focusing on low power 3 4 processors using 65 nm manufacturing technology edit sony toshiba ee gs pstwo 5 2005 intel core 2006 01 05 intel pentium 4 cedar mill 2006 01 16 intel pentium d 900 series 2006 01 16 intel xeon sossaman 2006 03 14 intel celeron d cedar mill cores 2006 05 28 intel core 2 2006 07 27 amd athlon 64 series starting from lima 2007 02 20 amd turion 64 x2 series starting from tyler 2007 05 07 nvidia geforce 8800gt gpu 2007 10 29 sony toshiba ibm cell playstation 3 updated 2007 10 30 sun ultrasparc t2 2007 10 amd phenom series ibm s z10 ibm loki xbox 360 processor 2007 ibm broadway nintendo wii 2007 ti omap 3 family 6 2008 02 via nano 2008 05 amd turion ultra 2008 06 7 loongson 2009 nikon expeed 2 2010 mcst elbrus 4c 2014 8 srisa 1890vm9ya 2016 9 cdta 2025 references edit 2006 industry roadmap archived september 27 2007 at the wayback machine table 40a intel s 10nm cannon lake and core i3 8121u deep dive review archived from the original on january 30 2019 fujitsu introduces world class 65 nanometer process technology for advanced server mobile applications fujitsu press release sunnyvale ca september 20 2005 archived from the original on september 27 2011 retrieved august 10 2008 kim paul february 7 2006 65nm cmos process technology pdf designcon fujitsu ソニー 65nm対応の半導体設備を導入 3年間で2 000億円の投資 pc watch impress co jp archived from the original on august 13 2016 omap 3 family of multimedia applications processors pdf texas instruments 2007 p 1 gruener wolfgang may 3 2007 amd preps 65 nm turion x2 processors tg daily archived from the original on september 13 2007 retrieved march 4 2008 microprocessor elbrus 4c фгу фнц нииси ран разработка сбис sources edit intel to cut prescott leakage by 75 at 65nm the register august 31 2004 retrieved august 25 2007 engineering sample of the yonah core pentium m idf spring 2005 extremetech amd s 65 nano silicon ready to roll the inquirer september 2 2005 archived from the original on november 25 2005 retrieved august 25 2007 preceded by 90 nm mosfet manufacturing processes succeeded by 45 nm retrieved from https en wikipedia org w index php title 65_nm_process oldid 1352175465 category international technology roadmap for semiconductors lithography nodes hidden categories articles with short description short description is different from wikidata use mdy dates from march 2022 webarchive template wayback links cs1 unfit url this page was last edited on 2 may 2026 at 15 23 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply by using this site you agree to the terms of use and privacy policy wikipedia is a registered trademark of the wikimedia foundation inc a non profit organization privacy policy about wikipedia disclaimers contact wikipedia legal safety contacts code of conduct developers statistics cookie statement mobile view search search toggle the table of contents 65 nm process 13 languages add topic