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carl frosch wikipedia jump to content main menu main menu move to sidebar hide navigation main page contents current events random article about wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 transistors devices 2 references 3 external links toggle the table of contents carl frosch 5 languages català deutsch fulfulde français 日本語 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia american scientist 1908 1984 this article is about the scientist for the boxer see carl froch npn field effect transistor 1957 carl john 1 frosch september 6 1908 may 18 1984 2 was a bell labs researcher with lincoln derick frosch discovered that silicon could be protectively coated by silicon dioxide by the right exposure to oxygen when hot and patented the method 3 4 such protective coating overcame a problem of surface states found in active silicon circuit elements the discovery also revealed the potential for the process of silicon etching npnp field effect transistor 1957 in 1957 frosch and derick published their discovery of silicon surface passivation by silicon dioxide using selective sio 2 predeposition and masking to produce the first n type and p type semiconductor surface patterns the first silicon dioxide field effect transistors the first mosfet 5 their transistors were the first in which drain and source were adjacent at the surface showing that silicon dioxide surface passivation protected and insulated silicon wafers the invention of the bidimensionar planar or surface semicondunctor enabled their later mass production at bell labs the importance of frosch s technique was immediately realized results of their work circulated around bell labs in the form of btl memos before being published in 1957 at shockley semiconductor william shockley had circulated the preprint of their article in december 1956 to all his senior staff including jean hoerni 6 7 8 9 taking advantage of silicon dioxide s passivating effect on the silicon surface hoerni proposed to make transistors that were protected by a layer of silicon dioxide 10 later jean hoerni while working at fairchild semiconductor had first patented the planar process in 1959 11 12 transistors devices edit frosch and derrick build several silicon dioxide field effect transistors in 1957 one resembling modern mosfets and another with a npnp structure similar to modern igbts references edit michael riordan lillian hoddeson 1997 crystal fire page 222 w w norton company isbn 0 393 04124 7 specific carl john frosch the canadian patent office record and register of copyrights and trade marks volume 77 issues 36 43 carl j frosch 1908 1984 find a grave huff howard riordan michael september 1 2007 frosch and derick fifty years later foreword the electrochemical society interface 16 3 29 29 doi 10 1149 2 f02073if issn 1064 8208 us2802760a lincoln derick frosch carl j oxidation of semiconductive surfaces for controlled diffusion issued august 13 1957 frosch c j derick l september 1 1957 surface protection and selective masking during diffusion in silicon journal of the electrochemical society 104 9 547 doi 10 1149 1 2428650 issn 1945 7111 moskowitz sanford l 2016 advanced materials innovation managing global technology in the 21st century john wiley sons p 168 isbn 978 0 470 50892 3 christophe lécuyer david c brook jay last 2010 makers of the microchip a documentary history of fairchild semiconductor mit press pp 62 63 isbn 978 0 262 01424 3 claeys cor l 2003 ulsi process integration iii proceedings of the international symposium the electrochemical society pp 27 30 isbn 978 1 56677 376 8 lojek bo 2007 history of semiconductor engineering springer science business media p 120 isbn 9783540342588 lojek bo 2007 history of semiconductor engineering springer science business media p 120 isbn 9783540342588 us 3025589 hoerni j a method of manufacturing semiconductor devices filed may 1 1959 us 3064167 hoerni j a semiconductor device filed may 15 1960 external links edit silicon burns a description of the discovery from the point of view of a colleague at bell labs this article about an american scientist is a stub you can help wikipedia by adding missing information v t e retrieved from https en wikipedia org w index php title carl_frosch oldid 1353179163 categories 1908 births 1984 deaths scientists at bell labs american scientist stubs hidden categories articles with short description short description is different from wikidata use mdy dates from july 2025 all stub articles this page was last edited on 8 may 2026 at 17 25 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply by using this site you agree to the terms of use and privacy policy wikipedia is a registered trademark of the wikimedia foundation inc a non profit organization privacy policy about wikipedia disclaimers contact wikipedia legal safety contacts code of conduct developers statistics cookie statement mobile view search search toggle the table of contents carl frosch 5 languages add topic