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oxide thin film transistor wikipedia jump to content main menu main menu move to sidebar hide navigation main page contents current events random article about wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 history 2 properties 3 growth 4 commercial use 5 references toggle the table of contents oxide thin film transistor 3 languages català فارسی 中文 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia cross sectional diagram of typical metal oxide thin film transistor in this case the oxide refers to the semiconducting layer between the source and drain electrodes an oxide thin film transistor oxide tft or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound an oxide tft is distinct from a metal oxide field effect transistor mosfet where the word oxide refers to the insulating gate dielectric normally silicon dioxide in an oxide tft the word oxide refers to the semiconductor oxide tfts have applications as amplifiers to deliver current to emitters in display backplanes history edit the first transistor employing a metal oxide as the semiconductor was reported in 1964 by klasens and koelmans at philips research laboratories 1 however oxide tfts were seldom considered again for several decades after this it wasn t until the early 2000 s that hideo hosono who was studying transparent conducting oxides 2 discovered that oxysulfides 3 and indium gallium zinc oxide 4 5 could be used as semiconductors in tfts soon after john wager at oregon state university reported oxide tfts employing the binary oxide zinc oxide as the semiconductor 6 properties edit oxides have several properties which make them desirable over hydrogenated amorphous silicon a si h which was the incumbent tft technology in the early 2000 s 7 firstly the electron mobility is roughly 100 times higher in oxide tfts 8 because the source drain current in transistors is linearly proportional to electron mobility 9 so too are the amplification properties the result of this is that smaller transistors can be used to provide the same current in a display this means that a higher resolution and switching speed is possible a si h additionally suffers from issues with environmental stability such as the staebler wronski effect 10 as oxides are already oxidized they are generally more environmentally stable however they do experience a phenomenon called negative bias illumination stress nbis where the threshold voltage changes under constant illumination 11 most n type electron transporting oxide tfts employ semiconductors that have a wide bandgap generally greater than 3 ev for this reason they are attractive for use in fully transparent electronics their wide bandgap also means they have a low off current and hence a high on off ratio a desirable property for well defined on and off states one significant drawback with oxide tfts is that there are very few p type hole transporting metal oxide semiconductors 12 while not a significant problem when providing amplification to emitters this does mean oxide semiconductors are less suitable for complementary logic and hence information processing growth edit metal oxide semiconductors are typically deposited using sputtering a vacuum based growth technique resulting in an amorphous or polycrystalline layer oxides can also be deposited from solution such as via spin coating or spray coating 13 commercial use edit several companies have adopted oxide tfts as a platform for display drivers notably sharp in 2012 14 and apple in 2013 15 references edit klasens h a koelmans h 1964 09 01 a tin oxide field effect transistor solid state electronics 7 9 701 702 bibcode 1964ssele 7 701k doi 10 1016 0038 1101 64 90057 7 issn 0038 1101 hosono hideo yasukawa masahiro kawazoe hiroshi 1996 08 01 novel oxide amorphous semiconductors transparent conducting amorphous oxides journal of non crystalline solids 203 334 344 bibcode 1996jncs 203 334h doi 10 1016 0022 3093 96 00367 5 issn 0022 3093 ueda k inoue s hirose s kawazoe h hosono h 2000 10 16 transparent p type semiconductor lacuos layered oxysulfide applied physics letters 77 17 2701 2703 bibcode 2000apphl 77 2701u doi 10 1063 1 1319507 issn 0003 6951 nomura kenji ohta hiromichi ueda kazushige kamiya toshio hirano masahiro hosono hideo 2003 05 23 thin film transistor fabricated in single crystalline transparent oxide semiconductor science 300 5623 1269 1272 bibcode 2003sci 300 1269n doi 10 1126 science 1083212 issn 0036 8075 pmid 12764192 s2cid 20791905 hosono hideo july 2018 how we made the igzo transistor nature electronics 1 7 428 doi 10 1038 s41928 018 0106 0 issn 2520 1131 hoffman r l norris b j wager j f 2003 01 28 zno based transparent thin film transistors applied physics letters 82 5 733 735 bibcode 2003apphl 82 733h doi 10 1063 1 1542677 issn 0003 6951 brotherton s d 2013 introduction to thin film transistors physics and technology of tfts springer international publishing isbn 978 3 319 00001 5 kamiya toshio nomura kenji hosono hideo 2010 02 01 present status of amorphous in ga zn o thin film transistors science and technology of advanced materials 11 4 044305 doi 10 1088 1468 6996 11 4 044305 issn 1468 6996 pmc 5090337 pmid 27877346 sze s m ng kwok k 2006 04 10 physics of semiconductor devices doi 10 1002 0470068329 isbn 978 0 470 06832 8 staebler d l wronski c r 1977 08 15 reversible conductivity changes in discharge produced amorphous si applied physics letters 31 4 292 294 bibcode 1977apphl 31 292s doi 10 1063 1 89674 issn 0003 6951 nomura kenji kamiya toshio hosono hideo 2010 interface and bulk effects for bias light illumination instability in amorphous in ga zn o thin film transistors journal of the society for information display 18 10 789 795 doi 10 1889 jsid18 10 789 issn 1938 3657 s2cid 62712554 wang zhenwei nayak pradipta k caraveo frescas jesus a alshareef husam n 2016 recent developments in p type oxide semiconductor materials and devices advanced materials 28 20 3831 3892 doi 10 1002 adma 201503080 hdl 10754 600277 issn 1521 4095 pmid 26879813 s2cid 205263052 thomas stuart r pattanasattayavong pichaya anthopoulos thomas d 2013 07 22 solution processable metal oxide semiconductors for thin film transistor applications chemical society reviews 42 16 6910 6923 doi 10 1039 c3cs35402d issn 1460 4744 pmid 23770615 sharp begins to produce oxide tft igzo based lcds oled info www oled info com retrieved 2021 08 27 igzo display tech finally makes it to mass market ipad air now high res desktop display soon extremetech www extremetech com retrieved 2021 08 27 v t e electronic components semiconductor devices mos transistors transistor nmos pmos bicmos biofet chemical field effect transistor chemfet complementary mos cmos depletion load nmos fin field effect transistor finfet floating gate mosfet fgmos insulated gate bipolar transistor igbt isfet ldmos mos field effect transistor mosfet multi gate field effect transistor mugfet power mosfet thin film transistor tft vmos umos qfet tunnel field effect transistor tfet high electron mobility transistor hemt rf cmos native transistor other transistors bipolar junction transistor bjt darlington transistor diffused junction transistor field effect transistor fet junction gate fet jfet organic fet ofet light emitting transistor let pentode transistor point contact transistor programmable unijunction transistor put static induction transistor sit tetrode transistor nanoscale vacuum channel transistor nvct single electron transistor set heterojunction bipolar transistor hbt mesfet heterostructure emitter bipolar transistor hebt itfet avalanche transistor junctionless nanowire transistor jlnt schottky transistor spin transistor ballistic collection transistor ballistic deflection transistor bdt drift field transistor organic electrochemical transistor oect spacistor surface barrier transistor synaptic transistor oxide thin film transistor nomfet grown junction transistor eosfet alloy junction transistor fe fet dna field effect transistor dnafet diodes avalanche diode shockley diode selenium rectifier fast diode single photon avalanche diode spad constant current diode cld crd gunn diode varicap impatt diode metal insulator metal diode mim diode transient voltage suppression diode tvs diode laser diode ld light emitting diode led organic light emitting diode oled photodiode pin diode p n diode tunnel diode avalanche photodiode apd solar cell multi junction solar cell mj hybrid solar cell schottky junction solar cell plasmonic solar cell heterojunction solar cell hjt schottky diode step recovery diode srd zener diode resonant tunneling diode rtd photoreflector backward diode geometric diode lr diode chua s diode baritt diode stabistor phosphorescent organic light emitting diode pholed thin film diode superluminescent diode sld josephson diode hole accumulation diode had silicon photomultiplier sipm metal rectifier bifacial solar cells bsc integrated circuits hybrid integrated circuit hic mixed signal integrated circuit mos integrated circuit mos ic three dimensional integrated circuit 3d ic photonic integrated circuit pic application specific integrated circuit asic field programmable gate array fpga system on a chip soc other devices diac heterostructure barrier varactor light emitting capacitor lec memistor memristor memtransistor memory cell metal oxide varistor mov organic semiconductor photodetector silicon controlled rectifier scr silicon controlled switch scs solaristor static induction thyristor sith thyristor trancitor triac varicap vertical cavity surface emitting laser vcsel gate turn off thyristor gto integrated gate commutated thyristor igct unijunction transistor ujt quantum cascade laser qcl photoresistor quantum dot display quantum dot solar cell photoelectrochemical cell dye sensitized solar cell plasmonic solar cell quantum dot laser quadrac interband cascade laser icl oscillistor mos composite static induction thyristor csmt mos controlled thyristor mct resistive opto isolator ro emitter turn off thyristor eto trisil quantum well infrared photodetector qwip quantum cascade detector qcd resonant cavity enhanced photo detector rce golay cell hybrid pixel detector semiconductor detector voltage regulators linear regulator low dropout regulator switching regulator buck boost buck boost split pi ćuk sepic charge pump switched capacitor vacuum tubes standard acorn tube audion beam tetrode barretter compactron diode fleming valve neutron tube nonode nuvistor pentagrid hexode heptode octode pentode photomultiplier pmt phototube tetrode triode x ray tube double diode triode additron tube computron tube micropup rf backward wave oscillator bwo cavity magnetron crossed field amplifier cfa gyrotron inductive output tube iot klystron maser sutton tube traveling wave tube twt vircator cathode ray tubes beam deflection tube charactron iconoscope magic eye tube monoscope selectron tube storage tube trochotron video camera tube williams tube gas filled tubes crossatron dekatron ignitron krytron mercury arc valve nixie tube thyratron trigatron voltage regulator tube geiger müller tube wire chamber neon lamp adjustable potentiometer digital variable capacitor varicap passive connector audio and video electrical power rf ferrite antifuse fuse resettable efuse resistor switch thermistor varistor reactive capacitor types ceramic resonator crystal oscillator inductor relay reed relay mercury relay other devices hall effect sensor squid spin valve magnetic tunnel junction mtj planar hall sensor ggnmos retrieved from https en wikipedia org w index php title oxide_thin film_transistor oldid 1370013676 categories transistor types semiconductor devices this page was last edited on 18 august 2026 at 16 21 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply by using this site you agree to the terms of use and privacy policy wikipedia is a registered trademark of the wikimedia foundation inc a non profit organization privacy policy about wikipedia disclaimers contact wikipedia legal safety contacts code of conduct developers statistics cookie statement mobile view search search toggle the table of contents oxide thin film transistor 3 languages add topic