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programmable rom wikipedia jump to content main menu main menu move to sidebar hide navigation main page contents current events random article about wikipedia contact us contribute help learn to edit community portal recent changes upload file special pages search search appearance donate create account log in personal tools donate create account log in contents move to sidebar hide top 1 history toggle history subsection 1 1 one time programmable memory 2 programming 3 see also 4 references 5 bibliography 6 external links toggle the table of contents programmable rom 40 languages العربية български català čeština dansk deutsch ελληνικά español eesti euskara فارسی suomi français gaeilge hrvatski magyar bahasa indonesia italiano 日本語 қазақша 한국어 lietuvių latviešu bahasa melayu nederlands polski português română русский srpskohrvatski српскохрватски simple english slovenčina shqip српски srpski ไทย українська tiếng việt 吴语 粵語 中文 edit links article talk english read edit view history tools tools move to sidebar hide actions read edit view history general what links here related changes upload file permanent link page information cite this page get shortened url switch to legacy parser print export download as pdf printable version in other projects wikimedia commons wikidata item appearance move to sidebar hide from wikipedia the free encyclopedia redirected from programmable read only memory write once computer memory prom redirects here for other uses see prom disambiguation computer memory and data storage types general memory cell memory coherence cache coherence memory hierarchy memory access pattern memory map secondary storage mos memory floating gate continuous availability areal density computer storage block data storage object storage direct attached storage network attached storage storage area network block level storage single instance storage data structured data unstructured data big data metadata data compression data corruption data cleansing data degradation data integrity data security data validation data validation and reconciliation data recovery storage data cluster directory shared resource file sharing file system clustered file system distributed file system distributed file system for cloud distributed data store distributed database database data bank data storage data store data deduplication data structure data redundancy replication computing memory refresh storage record information repository knowledge base computer file object file file deletion file copying backup core dump hex dump data communication information transfer temporary file copy protection digital rights management volume computing boot sector master boot record volume boot record guid partition table disk array disk image disk mirroring disk aggregation disk partitioning memory segmentation locality of reference logical disk storage virtualization virtual memory memory mapped file software entropy software rot in memory database in memory processing persistence computer science persistent data structure raid non raid drive architectures memory paging bank switching grid computing cloud computing cloud storage fog computing edge computing dew computing amdahl s law moore s law kryder s law volatile ram hardware cache cpu cache scratchpad memory dram edram sdram sgram ddr gddr lpddr qdrsram edo dram xdr dram rdram hbm sram 1t sram reram qram content addressable memory cam computational ram vram dual ported ram video ram dual ported dram historical williams kilburn tube 1946 1947 delay line memory 1947 mellon optical memory 1951 selectron tube 1952 dekatron t ram 2009 z ram 2002 2010 non volatile rom diode matrix mrom prom eprom eeprom rom cartridge solid state storage sss flash memory is used in solid state drive ssd solid state hybrid drive sshd usb flash drive ibm flashsystem flash core module memory card memory stick compactflash pc card multimediacard sd card sim card smartmedia universal flash storage sxs microp2 xqd card programmable metallization cell nvram memistor memristor pcm 3d xpoint mram electrochemical ram ecram nano ram cbram early stage nvram feram reram fefet memory analog recording phonograph cylinder phonograph record quadruplex videotape vision electronic recording apparatus magnetic recording magnetic storage magnetic tape magnetic tape data storage tape drive tape library digital data storage dds videotape cassette tape linear tape open betamax 8 mm video format dv minidv micromv u matic vhs s vhs vhs c d vhs hard disk drive optical 3d optical data storage optical disc laserdisc compact disc digital audio cdda cd cd video cd r cd rw video cd super video cd mini cd nintendo optical discs cd rom hyper cd rom dvd dvd r dvd video dvd card dvd ram minidvd hd dvd blu ray ultra hd blu ray holographic versatile disc worm in development cbram racetrack memory nram millipede memory ecram patterned media holographic data storage electronic quantum holography 5d optical data storage dna digital data storage universal memory time crystal quantum memory ultraram historical paper data storage 1725 punched card 1725 punched tape 1725 plugboard drum memory 1932 magnetic core memory 1949 plated wire memory 1957 core rope memory 1960s thin film memory 1962 disk pack 1962 twistor memory 1968 bubble memory 1970 floppy disk 1971 v t e a programmable read only memory prom is a form of digital memory where the contents are set after the device is manufactured once set the contents are then permanent a prom is one type of read only memory rom proms are usually used in digital electronic devices to store low level programs such as firmware or microcode proms may be used during development of a system that will ultimately be converted to roms in a mass produced version these types of memories are used in microcontrollers video game consoles mobile phones radio frequency identification rfid tags implantable medical devices high definition multimedia interfaces hdmi and in many other consumer and automotive products proms are manufactured blank and depending on the technology can be programmed at the wafer final test or system stage blank prom chips are programmed by plugging them into a device called a prom programmer a typical prom device has an array of memory cells the bipolar transistors in the cells have an emitter that is connected to a fuse called a polyfuse to program a prom is to strategically blow the polyfuses 1 history edit the prom was invented in 1956 by wen tsing chow working for the arma division of the american bosch arma corporation in garden city new york 2 3 the invention was conceived at the request of the united states air force to come up with a more flexible and secure way of storing the targeting constants in the atlas e f icbm s airborne digital computer the patent and associated technology were held under secrecy order for several years while the atlas e f was the main operational missile of the united states icbm force the term burn referring to the process of programming a prom is also in the original patent as one of the original implementations was to literally burn the internal whiskers of diodes with a current overload to produce a circuit discontinuity the first prom programming machines were also developed by arma engineers under chow s direction and were located in arma s garden city lab and air force strategic air command sac headquarters one time programmable memory edit otp one time programmable memory is a special type of non volatile memory nvm that permits data to be written to memory only once once the memory has been programmed it retains its value upon loss of power i e is non volatile otp memory is used in applications where reliable and repeatable reading of data is required examples include boot code encryption keys and configuration parameters for analog sensor or display circuitry otp nvm is characterized over other types of nvm like efuse or eeprom by offering a low power small area footprint memory structure as such otp memory finds application in products from microprocessors display drivers to power management ics pmics commercially available semiconductor antifuse based otp memory arrays have been around at least since 1969 with initial antifuse bit cells dependent on blowing a capacitor between crossing conductive lines texas instruments developed a mos gate oxide breakdown antifuse in 1979 4 a dual gate oxide two transistor 2t mos antifuse was introduced in 1982 5 early oxide breakdown technologies exhibited a variety of scaling programming size and manufacturing problems that prevented volume production of memory devices based on these technologies another form of one time programmable memory device uses the same semiconductor chip as an ultraviolet erasable programmable read only memory uv eprom but the finished device is put into an opaque package instead of the expensive ceramic package with transparent quartz window required for erasing these devices are programmed with the same methods as the uv eprom parts but are less costly embedded controllers may be available in both field erasable and one time styles allowing a cost saving in volume production without the expense and lead time of factory programmed mask rom chips 6 although antifuse based prom has been available for decades it wasn t available in standard cmos until 2001 when kilopass technology inc patented 1t 2t and 3 5t antifuse bit cell technologies using a standard cmos process enabling integration of prom into logic cmos chips the first process node antifuse can be implemented in standard cmos is 0 18 um since the gate oxide breakdown is less than the junction breakdown special diffusion steps were not required to create the antifuse programming element in 2005 a split channel antifuse device 7 was introduced by sidense this split channel bit cell combines the thick io and thin gate oxide devices into one transistor 1t with a common polysilicon gate programming edit texas instruments prom type tbp18sa030n a typical prom comes with all bits reading as 1 burning a fuse bit during programming causes the bit to be read as 0 by blowing the fuses which is an irreversible process some devices can be reprogrammed if the new data replaces 1 s with 0 s some cpu instruction sets e g 6502 took advantage of this by defining a break brk instruction with the operation code of 00 in cases where there was an incorrect instruction it could be reprogrammed to a brk causing the cpu to transfer control to a patch this would execute the correct instruction and return to the instruction after the brk the bit cell is programmed by applying a high voltage pulse not encountered during a normal operation across the gate and substrate of the thin oxide transistor around 6 v for a 2 nm thick oxide or 30 mv cm to break down the oxide between gate and substrate the positive voltage on the transistor s gate forms an inversion channel in the substrate below the gate causing a tunneling current to flow through the oxide the current produces additional traps in the oxide increasing the current through the oxide and ultimately melting the oxide and forming a conductive channel from gate to substrate the current required to form the conductive channel is around 100 μa 100 nm 2 and the breakdown occurs in approximately 100 μs or less 8 see also edit intel hex eprom eeprom references edit whitaker jerry c 3 october 2018 the electronics handbook crc press isbn 978 1 4200 3666 4 han way huang 5 december 2008 embedded system design with c805 cengage learning p 22 isbn 978 1 111 81079 5 archived from the original on 27 april 2018 marie aude aufaure esteban zimányi 17 january 2013 business intelligence second european summer school ebiss 2012 brussels belgium july 15 21 2012 tutorial lectures springer p 136 isbn 978 3 642 36318 4 archived from the original on 27 april 2018 see us patent 4184207 archived 2018 04 27 at the wayback machine high density floating gate electrically programmable rom and us patent 4151021 archived 2018 04 27 at the wayback machine method of making a high density floating gate electrically programmable rom chip planning portal chipestimate com retrieved on 2013 08 10 ken arnold embedded controller hardware design newnes 2004 isbn 1 878707 52 3 page 102 see us patent 7402855 archived 2015 09 04 at the wayback machine split channel antifuse device wlodek kurjanowicz 2008 evaluating embedded non volatile memory for 65nm and beyond pdf archived from the original pdf on 2016 03 04 retrieved 2009 09 04 bibliography edit 1977 intel memory design handbook archive org intel prom datasheets intel vintage info view the us switch matrix patent 3028659 at us patent office archived 2015 10 16 at the wayback machine or google view kilopass technology patent us high density semiconductor memory cell and memory array using a single transistor and having variable gate oxide breakdown patent 6940751 at us patent office archived 2015 09 04 at the wayback machine or google view sidense us split channel antifuse array architecture patent 7402855 at us patent office archived 2015 09 04 at the wayback machine or google view the us method of manufacturing semiconductor integrated circuits patent 3634929 at us patent office archived 2015 09 04 at the wayback machine or google choi et al 2008 new non volatile memory structures for fpga architectures for the advantages and disadvantages table see ramamoorthy g dataquest insight nonvolatile memory ip market worldwide 2008 2013 page 10 gartner 2009 external links edit looking inside a 1970s prom chip that stores data in microscopic fuse shows die of a 256x4 mmi 5300 prom authority control databases gnd retrieved from https en wikipedia org w index php title programmable_rom oldid 1373422304 categories non volatile memory computer memory computer related introductions in 1956 american inventions hidden categories articles with short description short description is different from wikidata webarchive template wayback links this page was last edited on 5 september 2026 at 22 15 utc page was rendered with parsoid text is available under the creative commons attribution sharealike 4 0 license additional terms may apply by using this site you agree to the terms of use and privacy policy wikipedia is a registered trademark of the wikimedia foundation inc a non profit organization privacy policy about wikipedia disclaimers contact wikipedia legal safety contacts code of conduct developers statistics cookie statement mobile view search search toggle the table of contents programmable rom 40 languages add topic