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all the data in the chip must be rewritten at once it is usually used to store system software which must be immediately accessible to the computer such as the bios program which starts the computer and the software microcode for portable devices and embedded computers such as microcontrollers mrom mask programmed rom or mask rom in this type the data is programmed into the chip when the chip is manufactured so it is only used for large production runs it cannot be rewritten with new data prom programmable read only memory in this type the data is written into an existing prom chip before it is installed in the circuit but it can only be written once the data is written by plugging the chip into a device called a prom programmer eprom erasable programmable read only memory or uveprom in this type the data in it can be rewritten by removing the chip from the circuit board exposing it to an ultraviolet light to erase the existing data and plugging it into a prom programmer the ic package has a small transparent window in the top to admit the uv light it is often used for prototypes and small production run devices where the program in it may have to be changed at the factory 4m eprom showing transparent window used to erase the chip eeprom electrically erasable programmable read only memory in this type the data can be rewritten electrically while the chip is on the circuit board but the writing process is slow this type is used to hold firmware the low level microcode which runs hardware devices such as the bios program in most computers so that it can be updated nvram non volatile random access memory fram ferroelectric ram one type of nonvolatile ram flash memory in this type the writing process is intermediate in speed between eeproms and ram memory it can be written to but not fast enough to serve as main memory it is often used as a semiconductor version of a hard disk to store files it is used in portable devices such as pdas usb flash drives and removable memory cards used in digital cameras and cellphones history edit see also computer memory and memory cell computing early computer memory consisted of magnetic core memory as early solid state electronic semiconductors including transistors such as the bipolar junction transistor bjt were impractical for use as digital storage elements memory cells the earliest semiconductor memory dates back to the early 1960s with bipolar memory which used bipolar transistors 9 bipolar semiconductor memory made from discrete devices was first shipped by texas instruments to the united states air force in 1961 the same year the concept of solid state memory on an integrated circuit ic chip was proposed by applications engineer bob norman at fairchild semiconductor 10 the first single chip memory ic was the bjt 16 bit ibm sp95 fabricated in december 1965 engineered by paul castrucci 9 10 while bipolar memory offered improved performance over magnetic core memory it could not compete with the lower price of magnetic core memory which remained dominant up until the late 1960s 9 bipolar memory failed to replace magnetic core memory because bipolar flip flop circuits were too large and expensive 11 mos memory edit see also mosfet the advent of the metal oxide semiconductor field effect transistor mosfet citation needed invented by mohamed m atalla and dawon kahng at bell labs in 1959 12 enabled the practical use of metal oxide semiconductor mos transistors as memory cell storage elements a function previously served by magnetic cores in computer memory citation needed mos memory was developed by john schmidt at fairchild semiconductor in 1964 13 14 in addition to higher performance mos memory was cheaper and consumed less power than magnetic core memory 13 this led to mosfets eventually replacing magnetic cores as the standard storage elements in computer memory citation needed in 1965 j wood and r ball of the royal radar establishment proposed digital storage systems that use cmos complementary mos memory cells in addition to mosfet power devices for the power supply switched cross coupling switches and delay line storage 15 the development of silicon gate mos integrated circuit mos ic technology by federico faggin at fairchild in 1968 enabled the production of mos memory chips 16 nmos memory was commercialized by ibm in the early 1970s 17 mos memory overtook magnetic core memory as the dominant memory technology in the early 1970s 13 the term memory when used with reference to computers most often refers to volatile random access memory ram the two main types of volatile ram are static random access memory sram and dynamic random access memory dram bipolar sram was invented by robert norman at fairchild semiconductor in 1963 9 followed by the development of mos sram by john schmidt at fairchild in 1964 13 sram became an alternative to magnetic core memory but required six mos transistors for each bit of data 18 commercial use of sram began in 1965 when ibm introduced their sp95 sram chip for the system 360 model 95 9 toshiba introduced bipolar dram memory cells for its toscal bc 1411 electronic calculator in 1965 19 20 while it offered improved performance over magnetic core memory bipolar dram could not compete with the lower price of the then dominant magnetic core memory 21 mos technology is the basis for modern dram in 1966 dr robert h dennard at the ibm thomas j watson research center was working on mos memory while examining the characteristics of mos technology he found it was capable of building capacitors and that storing a charge or no charge on the mos capacitor could represent the 1 and 0 of a bit while the mos transistor could control writing the charge to the capacitor this led to his development of a single transistor dram memory cell 18 in 1967 dennard filed a patent under ibm for a single transistor dram memory cell based on mos technology 22 this led to the first commercial dram ic chip the intel 1103 in october 1970 23 24 25 synchronous dynamic random access memory sdram later debuted with the samsung km48sl2000 chip in 1992 26 27 the term memory is also often used to refer to non volatile memory specifically flash memory it has origins in read only memory rom programmable read only memory prom was invented by wen tsing chow in 1956 while working for the arma division of the american bosch arma corporation 28 29 in 1967 dawon kahng and simon sze of bell labs proposed that the floating gate of a mos semiconductor device could be used for the cell of a reprogrammable read only memory rom which led to dov frohman of intel inventing eprom erasable prom in 1971 30 eeprom electrically erasable prom was developed by yasuo tarui yutaka hayashi and kiyoko naga at japan s ministry of international trade and industry miti electrotechnical laboratory in 1972 31 flash memory was invented by fujio masuoka at toshiba in the early 1980s 32 33 masuoka and colleagues presented the invention of nor flash in 1984 34 and then nand flash in 1987 35 toshiba commercialized nand flash memory in 1987 36 37 applications edit see also list of mosfet applications mos memory applications mos memory type abbr mos memory cell applications static random access memory sram mosfets cache memory cell phones esram mainframes multimedia computers networking personal computers servers supercomputers telecommunications workstations 38 dvd disk buffer 39 data buffer 40 nonvolatile bios memory dynamic random access memory dram mosfet mos capacitor camcorders embedded logic edram graphics card hard disk drive hdd networks personal computers personal digital assistants printers 38 main computer memory desktop computers servers solid state drives video memory 39 framebuffer memory 41 42 ferroelectric random access memory fram mosfet ferroelectric capacitor non volatile memory radio frequency identification rf identification smart cards 38 39 read only memory rom mosfet character generators electronic musical instruments laser printer fonts video game rom cartridges word processor dictionary data 38 39 erasable programmable read only memory eprom floating gate mosfet cd rom drives embedded memory code storage modems 38 39 electrically erasable programmable read only memory eeprom floating gate mosfet anti lock braking systems air bags car radios cell phones consumer electronics cordless telephones disk drives embedded memory flight controllers military technology modems pagers printers set top box smart cards 38 39 flash memory flash floating gate mosfet ata controllers battery powered applications telecommunications code storage digital cameras mp3 players portable media players bios memory 38 usb flash drive 43 digital tv e books memory cards mobile devices set top box smartphones solid state drives tablet computers 39 non volatile random access memory nvram floating gate mosfets medical equipment spacecraft 38 39 see also edit electronics industry semiconductor industry references edit the mos memory market pdf integrated circuit engineering corporation smithsonian institution 1997 retrieved 16 october 2019 mos memory market trends pdf integrated circuit engineering corporation smithsonian institution 1998 retrieved 16 october 2019 veendrick 2017 pp 314 315 lin wen c 1990 crc handbook of digital system design second edition crc press p 225 isbn 0849342724 archived from the original on 27 october 2016 retrieved 4 january 2016 1 2 3 dawoud dawoud shenouda r peplow 2010 digital system design use of microcontroller river publishers pp 255 258 isbn 978 8792329400 archived from the original on 2014 07 06 annual semiconductor sales increase 21 6 percent top 400 billion for first time semiconductor industry association 5 february 2018 retrieved 29 july 2019 1 2 godse a p d a godse 2008 fundamentals of computing and programing india technical publications p 1 35 isbn 978 8184315097 archived from the original on 2014 07 06 1 2 arora ashok 2006 foundations of computer science laxmi publications pp 39 41 isbn 8170089719 archived from the original on 2014 07 06 1 2 3 4 5 1966 semiconductor rams serve high speed storage needs computer history museum retrieved 19 june 2019 1 2 semiconductor memory timeline notes pdf computer history museum november 8 2006 retrieved 2 august 2019 page 104 in orton john 2009 micro and macro semiconductors and the information revolution pp 95 133 doi 10 1016 b978 0 444 53240 4 00004 0 isbn 978 0 444 53240 4 1960 metal oxide semiconductor mos transistor demonstrated the silicon engine computer history museum 1 2 3 4 1970 mos dynamic ram competes with magnetic core memory on price computer history museum retrieved 29 july 2019 solid state design vol 6 horizon house 1965 page needed wood j ball r february 1965 the use of insulated gate field effect transistors in digital storage systems 1965 ieee international solid state circuits conference digest of technical papers vol viii pp 82 83 doi 10 1109 isscc 1965 1157606 1968 silicon gate technology developed for ics computer history museum retrieved 10 august 2019 critchlow d l 2007 recollections on mosfet scaling ieee solid state circuits society newsletter 12 1 19 22 doi 10 1109 n ssc 2007 4785536 1 2 dram ibm100 ibm 9 august 2017 retrieved 20 september 2019 spec sheet for toshiba toscal bc 1411 old calculator web museum archived from the original on 3 july 2017 retrieved 8 may 2018 toshiba toscal bc 1411 desktop calculator archived 2007 05 20 at the wayback machine 1966 semiconductor rams serve high speed storage needs computer history museum robert dennard encyclopedia britannica retrieved 8 july 2019 intel 35 years of innovation 1968 2003 pdf intel 2003 archived from the original pdf on 4 november 2021 retrieved 26 june 2019 the dram memory of robert dennard archived 2020 08 01 at the wayback machine history computer com lojek bo 2007 history of semiconductor engineering springer science business media pp 362 363 doi 10 1007 978 3 540 34258 8 isbn 9783540342588 the i1103 was manufactured on a 6 mask silicon gate p mos process with 8 μm minimum features the resulting product had a 2 400 µm 2 memory cell size a die size just under 10 mm 2 and sold for around 21 km48sl2000 7 datasheet samsung august 1992 retrieved 19 june 2019 electronic design electronic design 41 15 21 hayden publishing company 1993 the first commercial synchronous dram the samsung 16 mbit km48sl2000 employs a single bank architecture that lets system designers easily transition from asynchronous to synchronous systems huang han way 5 december 2008 embedded system design with c805 cengage learning p 22 isbn 978 1 111 81079 5 archived from the original on 27 april 2018 saecker markl 2013 p 136 1971 reusable semiconductor rom introduced computer history museum retrieved 19 june 2019 tarui y hayashi y nagai k 1972 electrically reprogrammable nonvolatile semiconductor memory ieee journal of solid state circuits 7 5 369 375 bibcode 1972ijssc 7 369t doi 10 1109 jssc 1972 1052895 issn 0018 9200 fulford benjamin 24 june 2002 unsung hero forbes archived from the original on 3 march 2008 retrieved 18 march 2008 us 4531203 fujio masuoka toshiba inventor of flash memory toshiba archived from the original on 20 june 2019 retrieved 20 june 2019 masuoka f momodomi m iwata y shirota r 1987 new ultra high density eprom and flash eeprom with nand structure cell electron devices meeting 1987 international iedm 1987 ieee doi 10 1109 iedm 1987 191485 1987 toshiba launches nand flash eweek april 11 2012 retrieved 20 june 2019 1971 reusable semiconductor rom introduced computer history museum retrieved 19 june 2019 1 2 3 4 5 6 7 8 veendrick 2000 p 267 1 2 3 4 5 6 7 8 veendrick 2017 p 315 veendrick 2017 p 264 shoup richard 2001 superpaint an early frame buffer graphics system pdf annals of the history of computing ieee archived from the original pdf on 2004 06 12 goldwasser s m 1985 computer architecture for interactive display of segmented imagery computer architectures for spatially distributed data pp 75 94 doi 10 1007 978 3 642 82150 9_5 isbn 978 3 642 82152 3 windbacher thomas june 2010 flash memory tu wien retrieved 20 december 2019 sources edit saecker michael markl volker 2013 big data analytics on modern hardware architectures a technology survey business intelligence lecture notes in business information processing vol 138 pp 125 149 doi 10 1007 978 3 642 36318 4_6 isbn 978 3 642 36317 7 veendrick harry j m 2017 memories nanometer cmos ics pp 249 320 doi 10 1007 978 3 319 47597 4_6 isbn 978 3 319 47595 0 veendrick harry 2000 deep submicron cmos ics from basics to asics springer us isbn 978 90 440 0111 2 v t e parallel computing general distributed computing parallel computing parallel algorithm massively parallel cloud computing high performance computing multiprocessing manycore processor gpgpu computer network systolic array levels bit instruction thread task data memory loop pipeline multithreading temporal simultaneous smt simultaneous and heterogenous speculative spmt preempt...